Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBAEC10
S25FL512S - 512-Mbit, 3.0V CMOS Flash Memory
FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I/O 133MHz 24-BGA (8x6)
IC FLASH 512MBIT SPI/QUAD 24BGA
FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 133 MHz 24-BGA (8x6)
| Infineon Technologies AG | Rochester Electronics | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | S25FL512SAGBAEC10 | S25FL512SAGBAEC10 | 448-S25FL512SAGBAEC10-ND | S25FL512SAGBAEC10 | S25FL512SAGBAEC10 |
| Product Name | Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBAEC10 | Memory | Memory | Memory | |
| Operating Temperature | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | |
| Package Type | P-TFBGA-24 | BGA; P-TFBGA-24 | 24-TBGA | BGA; 24-TBGA |
