Reference board for 1200 V CoolSiC™ MOSFET in TO263-7
This Reference Board is a drive card of the CoolSiC™ MOSFET 1200 V evaluation platform and it contains the EiceDRIVER™ 1ED Compact 1EDI20H12AH with allowing a bipolar supply, where VCC2 is +15 V and GND2 is negative.
The CoolSiC™ MOSFET 1200 V evaluation platform including EiceDRIVER™ gate driver IC was developed to show the driving options of the silicon carbide CoolSiC™ MOSFET in TO263-7pin. To show these options, the design was split into one motherboard and two drive cards for SMD. The motherboard EVAL_PS_SIC_DP_MAIN was designed for a maximum voltage of 800 V and a maximum pulsed current of 130 A.
Summary of Features
1200V CoolSiC™ Silicon Carbide (SiC) Trench MOSFET IMBG120R030M1H
1EDI20H12AH with bipolar power supply
Core-less isolated gate drivers
Negative turn-off gate voltage
Utilize the Insulated Metal Substrate (IMS)
All components Surface Mounted Devices (SMD)
Benefits
Very low switching losses
Benchmark gate threshold voltage, VGS(th) = 4.5 V
Robust body diode for hard commutation
Sense pin for optimized switching performance
Negative turn off voltage to avoid parasitic turn on
Applications
Industrial motor drives and controls
Motor Control
Reference board for 1200 V CoolSiC™ MOSFET in TO263-7
This Reference Board is a drive card of the CoolSiC™ MOSFET 1200 V evaluation platform and it contains the EiceDRIVER™ 1ED Compact 1EDI20H12AH with allowing a bipolar supply, where VCC2 is +15 V and GND2 is negative.
The CoolSiC™ MOSFET 1200 V evaluation platform including EiceDRIVER™ gate driver IC was developed to show the driving options of the silicon carbide CoolSiC™ MOSFET in TO263-7pin. To show these options, the design was split into one motherboard and two drive cards for SMD. The motherboard EVAL_PS_SIC_DP_MAIN was designed for a maximum voltage of 800 V and a maximum pulsed current of 130 A.
Summary of Features
- 1200V CoolSiC™ Silicon Carbide (SiC) Trench MOSFET IMBG120R030M1H
- 1EDI20H12AH with bipolar power supply
- Core-less isolated gate drivers
- Negative turn-off gate voltage
- Utilize the Insulated Metal Substrate (IMS)
- All components Surface Mounted Devices (SMD)
Benefits
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robust body diode for hard commutation
- Sense pin for optimized switching performance
- Negative turn off voltage to avoid parasitic turn on
Applications
- Industrial motor drives and controls
- Motor Control
