Infineon Technologies AG Low Noise RF Transistors BFP640

Summary of Features

• High gain low noise RF transistor
• Provides outstanding performance for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz
• High maximum stable gain :Gms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology
• Pb-free (RoHS compliant) package

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Manufacturer: Infineon Technologies
Win Source Part Number: 094137-BFP640
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12.5dB
Frequency - Transition: 40GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.65dB to 1.2dB @ 1.8GHz to 6GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 4.5V
Typical Gain (hFE) (Min): 110 @ 30mA, 3V
Maximum Power Dissipation: 200mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance