MOSFET N-CH 60V 195A TO220AB Product overview: IRLB3036PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLB3036PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 195A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 083600-IRLB3036PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 380W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 140nC @ 4.5V
Max Input Capacitance: 11210pF @ 50V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 165A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
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MOSFET, N-CH, 60V, 165A, 175DEG C, 380W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:165A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRLB3036PBF | IRLB3036PBF | 083600-IRLB3036PBF | 448-IRLB3036PBF-ND | 6887213 | IRLB3036PBF | IRLB3036PBF | 80P4466 |
| Product Name | 60V 195A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB3036PBF | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 165A, 175Deg C, 380W; Channel Type Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 380 milliwatts | 380000 milliwatts | 380000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
