Infineon Technologies AG Single FETs, MOSFETs IRLB3036PBF

MOSFET N-CH 60V 195A TO220AB

MOSFET N-Channel 60V 270A HEXFET TO220AB

MOSFET N-Channel 60V 270A HEXFET TO220AB

N-Channel 60V 195A (Tc) 380W (Tc) Through Hole TO-220AB

MOSFET N-CH 60V 195A TO220AB Product overview: IRLB3036PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLB3036PBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 083600-IRLB3036PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 380W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 140nC @ 4.5V
Max Input Capacitance: 11210pF @ 50V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 165A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance