Infineon Technologies AG Single FETs, MOSFETs IRLB3034PBF

Description
N-Channel 40V 195A (Tc) 375W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 40V 195A (Tc) 375W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLB3034PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLB3034PBF-ND
Single FETs, MOSFETs IRLB3034PBF-ND
N-Channel 40V 195A (Tc) 375W (Tc) Through Hole TO-220AB

N-Channel 40V 195A (Tc) 375W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Single FETs, MOSFETs - IRLB3034PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRLB3034PBF
Single FETs, MOSFETs IRLB3034PBF
MOSFET N-CH 40V 195A TO220AB

MOSFET N-CH 40V 195A TO220AB

Supplier's Site Datasheet
MOSFETs - 6887204 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6887204
MOSFETs 6887204
MOSFET N-Channel 40V 343A HEXFET TO220AB

MOSFET N-Channel 40V 343A HEXFET TO220AB

Supplier's Site
MOSFETs - 1249024 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1249024
MOSFETs 1249024
MOSFET N-Channel 40V 343A HEXFET TO220AB

MOSFET N-Channel 40V 343A HEXFET TO220AB

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB3034PBF - 089540-IRLB3034PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB3034PBF
089540-IRLB3034PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB3034PBF 089540-IRLB3034PBF
Manufacturer: Infineon Technologies Win Source Part Number: 089540-IRLB3034PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 195A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 162nC @ 4.5V Max Input Capacitance: 10315pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.7 mOhm @ 195A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 089540-IRLB3034PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 162nC @ 4.5V
Max Input Capacitance: 10315pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.7 mOhm @ 195A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
N Channel Mosfet, 40V, 195A, To-220Ab; Channel Type Infineon - 10R3511 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 40V, 195A, To-220Ab; Channel Type Infineon
10R3511
N Channel Mosfet, 40V, 195A, To-220Ab; Channel Type Infineon 10R3511
N CHANNEL MOSFET, 40V, 195A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:195A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 40V, 195A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:195A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; MSL:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 40V 343A 1.7mOhm 108nC

MOSFET MOSFT 40V 343A 1.7mOhm 108nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLB3034PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLB3034PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLB3034PBF
MOSFET N-CH 40V 195A TO220AB

MOSFET N-CH 40V 195A TO220AB

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) RS Components, Ltd. Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLB3034PBF-ND IRLB3034PBF 6887204 089540-IRLB3034PBF 10R3511 IRLB3034PBF IRLB3034PBF
Product Name Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB3034PBF N Channel Mosfet, 40V, 195A, To-220Ab; Channel Type Infineon MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; To-220ab TO-220; SOT3; TO-220AB TO-3; TO-220 TO-220; TO-220-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts
IDSS 195000 milliamps 195000 milliamps
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