Manufacturer: Infineon Technologies
Win Source Part Number: 1051401-IRL8113L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 105A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 250μA
Max Gate Charge: 35nC @ 4.5V
Max Input Capacitance: 2840pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 21A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1051401-IRL8113L |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL8113L |
| Polarity | N-Channel; N-Channel |
| V(BR)DSS | 30 volts |
| PD | 110000 milliwatts |
