MOSFET 2N-CH 30V 8.1A 8SO
Manufacturer: Infineon Technologies
Win Source Part Number: 1188522-IRL6372PBF
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 N-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Family Part Number: IRL6372PBF
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 8.1A
Rds On (Maximum) at Id, Vgs: 17.9mOhm at 8.1A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1.1V at 10μA
Gate Charge (Qg) (Maximum) at Vgs: 11nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 1020pF at 25V
Mosfet Array 2 N-Channel (Dual) 30V 8.1A 2W Surface Mount 8-SO
MOSFET 2N-CH 30V 8.1A 8SO
MOSFET 2N-CH 30V 8.1A 8SO
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRL6372PBF | 1188522-IRL6372PBF | IRL6372PBF-ND | 376-IRL6372PBF | IRL6372PBF |
| Product Name | FET, MOSFET Arrays | FETs - Arrays - IRL6372PBF | FET, MOSFET Arrays | MOSFET 2N-CH 30V 8.1A 8SO | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel; 2 N-Channel (Dual) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||
| IDSS | 8100 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
