The Infineon N-Channel MOSFET, part number 53Y4838, is rated for a maximum drain-source voltage of 60V and a continuous drain current of 195A, making it suitable for high-power applications. It features a low on-resistance of 1.5mOc (typical) at a gate-source voltage of 10V, which contributes to efficient power management. The device is optimized for logic level drive and exhibits improved gate, avalanche, and dynamic dV/dt ruggedness. This MOSFET is designed for various applications, including brushed and BLDC motor drives, battery-powered circuits, and DC/DC converters. It is housed in a TO-220AB package, facilitating through-hole mounting. The product is RoHS compliant and lead-free, ensuring it meets environmental standards. With a maximum power dissipation of 375W and a wide operating temperature range from -55¬8C to +175¬8C, this MOSFET is suitable for demanding industrial applications.
N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB
MOSFET N-CH 60V 195A TO220AB Product overview: IRL60B216 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL60B216 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 921544-IRL60B216
Series: HEXFET®, StrongIRFET™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 60 V 195A (Tc) 375W (Tc) Through Hole TO-220AB
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: IRL60B216
Categories: Discrete Semiconductor Products
Case / Package: TO-220AB
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 94 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl
MOSFET, N-CH, 60V, 195A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:195A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 60V 195A TO220AB
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRL60B216-ND | 278-IRL60B216 | 921544-IRL60B216 | IRL60B216 | 53Y4838 | IRL60B216 |
| Product Name | Single FETs, MOSFETs | 60V 195A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL60B216 | MOSFET | Mosfet, N-Ch, 60V, 195A, To-220Ab-3; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | Tube | TO-220; SOT3; TO-220AB | TO-3; TO-220 | TO-220; TO-220-3 | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts |
