MOSFET N-CH 100V 17A D2PAK Product overview: IRL530NSTRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL530NSTRLPBF can be used for catalog matching and distributor lookup.
N-Channel 100V 17A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK
N-Channel 100V 17A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK
N-Channel 100V 17A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 017749-IRL530NSTRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 34nC @ 5V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 17A D2PAK
MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET N-CH 100V 17A D2PAK
MOSFET N-CH 100V 17A D2PAK
MOSFET, N-CH, 100V, 17A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRL530NSTRLPBF | IRL530NSTRLPBFDKR-ND | 017749-IRL530NSTRLPBF | 2583992 | IRL530NSTRLPBF | IRL530NSTRLPBF | 376-IRL530NSTRLPBF | IRL530NSTRLPBF | 13AC9256 |
| Product Name | 100V 17A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL530NSTRLPBF | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 100V 17A D2PAK | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 17A, To-263; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | |||||
| PD | 3.8 milliwatts | 3800 to 79000 milliwatts | 3800 milliwatts | 3800 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
