Infineon Technologies AG Single FETs, MOSFETs IRL520NPBF

Description
N-Channel 100V 10A (Tc) 48W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 100V 10A (Tc) 48W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRL520NPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL520NPBF-ND
Single FETs, MOSFETs IRL520NPBF-ND
N-Channel 100V 10A (Tc) 48W (Tc) Through Hole TO-220AB

N-Channel 100V 10A (Tc) 48W (Tc) Through Hole TO-220AB

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL520NPBF - 205465-IRL520NPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL520NPBF
205465-IRL520NPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL520NPBF 205465-IRL520NPBF
Manufacturer: Infineon Technologies Win Source Part Number: 205465-IRL520NPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 20nC @ 5V Max Input Capacitance: 440pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 180 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 205465-IRL520NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 440pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 180 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRL520NPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRL520NPBF
Single FETs, MOSFETs IRL520NPBF
MOSFET N-CH 100V 10A TO220AB

MOSFET N-CH 100V 10A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRL520NPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRL520NPBF
Single FETs, MOSFETs IRL520NPBF
IRL520N - 12V-300V N-CHANNEL POW

IRL520N - 12V-300V N-CHANNEL POW

Supplier's Site Datasheet
Transistor - 66777330 - Radwell International
Willingboro, NJ, United States
Transistor
66777330
Transistor 66777330
POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.22OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.22OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL520NPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL520NPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL520NPBF
MOSFET N-CH 100V 10A TO220AB

MOSFET N-CH 100V 10A TO220AB

Supplier's Site
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V - 70017091 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V
70017091
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V 70017091
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V

Supplier's Site
Mosfet, N, To-220; Transistor Polarity Infineon - 97K2386 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-220; Transistor Polarity Infineon
97K2386
Mosfet, N, To-220; Transistor Polarity Infineon 97K2386
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; RoHS Compliant: Yes

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; RoHS Compliant: Yes

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRL520NPBF
Triode/MOS Tube/Transistor >> MOSFETs IRL520NPBF
100V 10A 180mΩ@10V,6A 48W 2V@250uA N Channel TO-220AB-3 MOSFETs ROHS

100V 10A 180mΩ@10V,6A 48W 2V@250uA N Channel TO-220AB-3 MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT 10A 13.3nC 180mOhm LogLvAB

MOSFET MOSFT 10A 13.3nC 180mOhm LogLvAB

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Radwell International Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. Newark, An Avnet Company LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRL520NPBF-ND 205465-IRL520NPBF IRL520NPBF 66777330 IRL520NPBF 70017091 97K2386 IRL520NPBF IRL520NPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL520NPBF Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V Mosfet, N, To-220; Transistor Polarity Infineon Triode/MOS Tube/Transistor >> MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-220 TO-3; TO-220 TO-220
V(BR)DSS 100 volts 100 volts 100 volts 100 volts
PD 48000 milliwatts 48000 milliwatts 48000 milliwatts 48000 milliwatts 48000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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