Manufacturer: Infineon Technologies
Win Source Part Number: 205465-IRL520NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 440pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 180 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
N-Channel 100V 10A (Tc) 48W (Tc) Through Hole TO-220AB
POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 100V, 0.22OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 10A TO220AB
IRL520N - 12V-300V N-CHANNEL POW
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V
100V 10A 180mΩ@10V,6A 48W 2V@250uA N Channel TO-220AB-3 MOSFETs ROHS
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; RoHS Compliant: Yes
MOSFET MOSFT 10A 13.3nC 180mOhm LogLvAB
MOSFET N-CH 100V 10A TO220AB
| Win Source Electronics | DigiKey | Radwell International | ODG (Origin Data Global) | Allied Electronics, Inc. | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 205465-IRL520NPBF | IRL520NPBF-ND | 66777330 | IRL520NPBF | 70017091 | IRL520NPBF | 97K2386 | IRL520NPBF | IRL520NPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL520NPBF | Single FETs, MOSFETs | Transistor | Single FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N, To-220; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | |||||
| PD | 48000 milliwatts | 48000 milliwatts | 48000 milliwatts | 48000 milliwatts | 48000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220 | TO-220 | TO-3; TO-220 | TO-220; TO-220-3 |
