Win Source Part Number: 1065618-IRL40B212
Category: Discrete Semiconductor Products>Transistors
Series: HEXFET®, StrongIRFET™
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Power Dissipation (Max): 231W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IRLB3034PBF; IRFB7437PBF; IRFB7434PBF; FDP8870IRL40B212.; SP001578760;
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IRL40B212,SP001
Base Product Number: IRL40B212
Product Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 40V 195A TO220AB Product overview: IRL40B212 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL40B212 can be used for catalog matching and distributor lookup.
N-Channel 40V 195A (Tc) 231W (Tc) Through Hole TO-220AB
MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl
MOSFET N-CH 40V 195A TO220AB
MOSFET, N-CH, 40V, 195A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:195A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 40V 195A TO220AB
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1065618-IRL40B212 | 278-IRL40B212 | IRL40B212-ND | IRL40B212 | IRL40B212 | 53Y4834 | IRL40B212 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 40V 195A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 195A, To-220Ab-3; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 231000 milliwatts | 231 milliwatts | 231000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-220; SOT3 | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 | |
| MOSFET Operating Mode | Enhancement |
