Infineon Technologies AG Single FETs, MOSFETs IRL3716SPBF

Description
N-Channel 20V 180A (Tc) 210W (Tc) Surface Mount D2PAK
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Description
N-Channel 20V 180A (Tc) 210W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IRL3716SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL3716SPBF-ND
Single FETs, MOSFETs IRL3716SPBF-ND
N-Channel 20V 180A (Tc) 210W (Tc) Surface Mount D2PAK

N-Channel 20V 180A (Tc) 210W (Tc) Surface Mount D2PAK

Buy Now Datasheet
FETs - Single - IRL3716SPBF - 1188493-IRL3716SPBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRL3716SPBF
1188493-IRL3716SPBF
FETs - Single - IRL3716SPBF 1188493-IRL3716SPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1188493-IRL3716SPBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 210W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 180A Rds On (Maximum) at Id, Vgs: 4mOhm at 90A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 79nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 5090pF at 10V

Manufacturer: Infineon Technologies
Win Source Part Number: 1188493-IRL3716SPBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 210W
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 180A
Rds On (Maximum) at Id, Vgs: 4mOhm at 90A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 79nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 5090pF at 10V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL3716SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL3716SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL3716SPBF
MOSFET N-CH 20V 180A D2PAK

MOSFET N-CH 20V 180A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRL3716SPBF-ND 1188493-IRL3716SPBF IRL3716SPBF
Product Name Single FETs, MOSFETs FETs - Single - IRL3716SPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 20 volts
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