Infineon Technologies AG Single FETs, MOSFETs IRL3502PBF

Description
N-Channel 20V 110A (Tc) 140W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 20V 110A (Tc) 140W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRL3502PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL3502PBF-ND
Single FETs, MOSFETs IRL3502PBF-ND
N-Channel 20V 110A (Tc) 140W (Tc) Through Hole TO-220AB

N-Channel 20V 110A (Tc) 140W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3502PBF - 1047462-IRL3502PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3502PBF
1047462-IRL3502PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3502PBF 1047462-IRL3502PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047462-IRL3502PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 110nC @ 4.5V Max Input Capacitance: 4700pF @ 15V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 7 mOhm @ 64A, 7V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: Infineon Technologies
Win Source Part Number: 1047462-IRL3502PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 110nC @ 4.5V
Max Input Capacitance: 4700pF @ 15V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 7 mOhm @ 64A, 7V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL3502PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL3502PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL3502PBF
MOSFET N-CH 20V 110A TO220AB

MOSFET N-CH 20V 110A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRL3502PBF-ND 1047462-IRL3502PBF IRL3502PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3502PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 20 volts
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