Infineon Technologies AG Single FETs, MOSFETs IRL3303S

Description
N-Channel 30V 38A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
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Description
N-Channel 30V 38A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IRL3303S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL3303S-ND
Single FETs, MOSFETs IRL3303S-ND
N-Channel 30V 38A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

N-Channel 30V 38A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3303S - 130657-IRL3303S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3303S
130657-IRL3303S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3303S 130657-IRL3303S
Manufacturer: Infineon Technologies Win Source Part Number: 130657-IRL3303S Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 38A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 26nC @ 4.5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 130657-IRL3303S
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 38A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 26nC @ 4.5V
Max Input Capacitance: 870pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL3303S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL3303S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL3303S
MOSFET N-CH 30V 38A D2PAK

MOSFET N-CH 30V 38A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRL3303S-ND 130657-IRL3303S IRL3303S
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3303S Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK -55degC ~ 175degC (TJ)
V(BR)DSS 30 volts
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