Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3103PBF IRL3103PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017745-IRL3103PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 94W (Tc) Family Name: IRL3103 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 64A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 33nC @ 4.5V Max Input Capacitance: 1650pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 12 mOhm @ 34A, 10V Alternative Parts (Cross-Reference): STP62NS04Z; 2SK3127(T4LMBSH); SUP45N03-13L-E3; Introduction Date: February 10, 2004 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Application Field: Used in Commercial, Industrial, Power Management
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 017745-IRL3103PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 94W (Tc) Family Name: IRL3103 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 64A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 33nC @ 4.5V Max Input Capacitance: 1650pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 12 mOhm @ 34A, 10V Alternative Parts (Cross-Reference): STP62NS04Z; 2SK3127(T4LMBSH); SUP45N03-13L-E3; Introduction Date: February 10, 2004 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Application Field: Used in Commercial, Industrial, Power Management
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3103PBF - 017745-IRL3103PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3103PBF
017745-IRL3103PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3103PBF 017745-IRL3103PBF
Manufacturer: Infineon Technologies Win Source Part Number: 017745-IRL3103PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 94W (Tc) Family Name: IRL3103 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 64A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 33nC @ 4.5V Max Input Capacitance: 1650pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 12 mOhm @ 34A, 10V Alternative Parts (Cross-Reference): STP62NS04Z; 2SK3127(T4LMBSH); SUP45N03-13L-E3; Introduction Date: February 10, 2004 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Application Field: Used in Commercial, Industrial, Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 017745-IRL3103PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 94W (Tc)
Family Name: IRL3103
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 64A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 33nC @ 4.5V
Max Input Capacitance: 1650pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 12 mOhm @ 34A, 10V
Alternative Parts (Cross-Reference): STP62NS04Z; 2SK3127(T4LMBSH); SUP45N03-13L-E3;
Introduction Date: February 10, 2004
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Application Field: Used in Commercial, Industrial, Power Management

Buy Now Datasheet
Singapore, Singapore
30V 64A MOSFET Transistor
278-IRL3103PBF
30V 64A MOSFET Transistor 278-IRL3103PBF
MOSFET N-CH 30V 64A TO220AB Product overview: IRL3103PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 64A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 64A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL3103PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 64A TO220AB Product overview: IRL3103PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 64A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 64A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL3103PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRL3103PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL3103PBF-ND
Single FETs, MOSFETs IRL3103PBF-ND
N-Channel 30V 64A (Tc) 94W (Tc) Through Hole TO-220AB

N-Channel 30V 64A (Tc) 94W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Single FETs, MOSFETs - IRL3103PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRL3103PBF
Single FETs, MOSFETs IRL3103PBF
MOSFET N-CH 30V 64A TO220AB

MOSFET N-CH 30V 64A TO220AB

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB

MOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL3103PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL3103PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL3103PBF
MOSFET N-CH 30V 64A TO220AB

MOSFET N-CH 30V 64A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 017745-IRL3103PBF 278-IRL3103PBF IRL3103PBF-ND IRL3103PBF IRL3103PBF IRL3103PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3103PBF 30V 64A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 94000 milliwatts 94000 milliwatts 94000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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