HEXFET N-Ch MOSFET 55A 100V D2PAK
N-Channel 100V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
N-Channel 100V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
N-Channel 100V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
MOSFET N-CH 100V 55A D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 017744-IRL2910STRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Family Name: IRL2910S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 140nC @ 5V
Max Input Capacitance: 3700pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 26 mOhm @ 29A, 10V
Alternative Parts (Cross-Reference): FQB55N10; BUK9615-100A; STB40NF10L;
Introduction Date: April 30, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 55A D2PAK
MOSFET MOSFT 100V 55A 26mOhm 93.3nC LogLvl
MOSFET, N-CH, 100V, 55A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 8303290 | 8303290P | IRL2910STRLPBFTR-ND | IRL2910STRLPBF | 017744-IRL2910STRLPBF | IRL2910STRLPBF | IRL2910STRLPBF | 43AC3300 |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2910STRLPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 55A, To-263-3; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| Package Type | TO-263; D2pak (to-263) | TO-263; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | 3700 pF @ 25 V | TO-3; TO-263 | |
| Number of units in IC | 1 | |||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
