Infineon Technologies AG Single FETs, MOSFETs IRL2910SPBF

Description
N-Channel 100V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
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Description
N-Channel 100V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRL2910SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL2910SPBF-ND
Single FETs, MOSFETs IRL2910SPBF-ND
N-Channel 100V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK

N-Channel 100V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2910SPBF - 040791-IRL2910SPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2910SPBF
040791-IRL2910SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2910SPBF 040791-IRL2910SPBF
Manufacturer: Infineon Technologies Win Source Part Number: 040791-IRL2910SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Family Name: IRL2910S Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 55A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 140nC @ 5V Max Input Capacitance: 3700pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 26 mOhm @ 29A, 10V Alternative Parts (Cross-Reference): FQB55N10; BUK9615-100A; STB40NF10L; Introduction Date: April 30, 2004 ECCN: EAR99 Country of Origin: China, Mexico Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 040791-IRL2910SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Family Name: IRL2910S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 140nC @ 5V
Max Input Capacitance: 3700pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 26 mOhm @ 29A, 10V
Alternative Parts (Cross-Reference): FQB55N10; BUK9615-100A; STB40NF10L;
Introduction Date: April 30, 2004
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
100V 55A MOSFET Transistor
278-IRL2910SPBF
100V 55A MOSFET Transistor 278-IRL2910SPBF
MOSFET N-CH 100V 55A D2PAK Product overview: IRL2910SPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 55A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL2910SPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 55A D2PAK Product overview: IRL2910SPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 55A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL2910SPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL2910SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL2910SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL2910SPBF
MOSFET N-CH 100V 55A D2PAK

MOSFET N-CH 100V 55A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRL2910SPBF-ND 040791-IRL2910SPBF 278-IRL2910SPBF IRL2910SPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2910SPBF 100V 55A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK Tube TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 100 volts 100 volts
PD 3800 to 200000 milliwatts 3800 milliwatts
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