Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2505PBF IRL2505PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069686-IRL2505PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 104A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 130nC @ 5V Max Input Capacitance: 5000pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 8 mOhm @ 54A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2505PBF - 069686-IRL2505PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRL2505PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL2505PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 55V 104A TO-220AB - 376-IRL2505PBF - Utmel Electronic Limited
    Utmel Electronic Limited
  • Transistor - 17555619 - Radwell International
    Radwell International
  • MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;TO-220AB;PD 200W;VGS +/-16V - 70017478 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Single FETs, MOSFETs - IRL2505PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet Transistor, N Channel, 104 A, 55 V, 8 Mohm, 10 V, 2 V Rohs Compliant Infineon - 38K3044 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 069686-IRL2505PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 104A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 130nC @ 5V Max Input Capacitance: 5000pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 8 mOhm @ 54A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2505PBF - 069686-IRL2505PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2505PBF
069686-IRL2505PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2505PBF 069686-IRL2505PBF
Manufacturer: Infineon Technologies Win Source Part Number: 069686-IRL2505PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 104A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 130nC @ 5V Max Input Capacitance: 5000pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 8 mOhm @ 54A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 069686-IRL2505PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 104A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 130nC @ 5V
Max Input Capacitance: 5000pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 8 mOhm @ 54A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRL2505PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL2505PBF-ND
Single FETs, MOSFETs IRL2505PBF-ND
N-Channel 55V 104A (Tc) 200W (Tc) Through Hole TO-220AB

N-Channel 55V 104A (Tc) 200W (Tc) Through Hole TO-220AB

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
55V 104A MOSFET Transistor
278-IRL2505PBF
55V 104A MOSFET Transistor 278-IRL2505PBF
MOSFET N-CH 55V 104A TO220AB Product overview: IRL2505PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 104A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 104A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL2505PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 104A TO220AB Product overview: IRL2505PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 104A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 104A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL2505PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL2505PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL2505PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL2505PBF
MOSFET N-CH 55V 104A TO220AB

MOSFET N-CH 55V 104A TO220AB

Supplier's Site
MOSFET N-CH 55V 104A TO-220AB - 376-IRL2505PBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 55V 104A TO-220AB
376-IRL2505PBF
MOSFET N-CH 55V 104A TO-220AB 376-IRL2505PBF
MOSFET N-CH 55V 104A TO-220AB

MOSFET N-CH 55V 104A TO-220AB

Supplier's Site
Transistor - 17555619 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
17555619
Transistor 17555619
POWER FIELD-EFFECT TRANSISTOR, 104A I(D), 55V, 0.01OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 104A I(D), 55V, 0.01OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;TO-220AB;PD 200W;VGS +/-16V - 70017478 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;TO-220AB;PD 200W;VGS +/-16V
70017478
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;TO-220AB;PD 200W;VGS +/-16V 70017478
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;TO-220AB;PD 200W;VGS +/-16V

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;TO-220AB;PD 200W;VGS +/-16V

Supplier's Site
Single FETs, MOSFETs - IRL2505PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRL2505PBF
Single FETs, MOSFETs IRL2505PBF
MOSFET N-CH 55V 104A TO220AB

MOSFET N-CH 55V 104A TO220AB

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRL2505PBF
MOSFET IRL2505PBF
MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB

MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB

Buy Now Datasheet
Mosfet Transistor, N Channel, 104 A, 55 V, 8 Mohm, 10 V, 2 V Rohs Compliant Infineon - 38K3044 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 104 A, 55 V, 8 Mohm, 10 V, 2 V Rohs Compliant Infineon
38K3044
Mosfet Transistor, N Channel, 104 A, 55 V, 8 Mohm, 10 V, 2 V Rohs Compliant Infineon 38K3044
MOSFET Transistor, N Channel, 104 A, 55 V, 8 mohm, 10 V, 2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 104 A, 55 V, 8 mohm, 10 V, 2 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Radwell International Allied Electronics, Inc. ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069686-IRL2505PBF IRL2505PBF-ND 278-IRL2505PBF IRL2505PBF 376-IRL2505PBF 17555619 70017478 IRL2505PBF IRL2505PBF 38K3044
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL2505PBF Single FETs, MOSFETs 55V 104A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 55V 104A TO-220AB Transistor MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;TO-220AB;PD 200W;VGS +/-16V Single FETs, MOSFETs MOSFET Mosfet Transistor, N Channel, 104 A, 55 V, 8 Mohm, 10 V, 2 V Rohs Compliant Infineon
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 55 volts 55 volts 55 volts 55 volts 55 volts
PD 200000 milliwatts 200 milliwatts 200000 milliwatts 200000 milliwatts 200000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 Tube TO-220; TO-220-3 TO-220 TO-220; TO-220-3 TO-3
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