Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL1004LPBF IRL1004LPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047413-IRL1004LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 130A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 5330pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 78A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047413-IRL1004LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 130A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 5330pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 78A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL1004LPBF - 1047413-IRL1004LPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL1004LPBF
1047413-IRL1004LPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL1004LPBF 1047413-IRL1004LPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047413-IRL1004LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 130A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 5330pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 78A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1047413-IRL1004LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 100nC @ 4.5V
Max Input Capacitance: 5330pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 78A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047413-IRL1004LPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL1004LPBF
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 3800 to 200000 milliwatts
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