Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48N IRFZ48N

Description
Manufacturer: Infineon Technologies Win Source Part Number: 092661-IRFZ48N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 64A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 81nC @ 10V Max Input Capacitance: 1970pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 32A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Application Field: Used in Power Management
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 092661-IRFZ48N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 64A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 81nC @ 10V Max Input Capacitance: 1970pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 32A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Application Field: Used in Power Management
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48N - 092661-IRFZ48N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48N
092661-IRFZ48N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48N 092661-IRFZ48N
Manufacturer: Infineon Technologies Win Source Part Number: 092661-IRFZ48N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 64A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 81nC @ 10V Max Input Capacitance: 1970pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 32A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 092661-IRFZ48N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 64A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 81nC @ 10V
Max Input Capacitance: 1970pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 32A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 092661-IRFZ48N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48N
Polarity N-Channel; N-Channel
V(BR)DSS 55 volts
PD 130000 milliwatts
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