Infineon Technologies AG N Channel Mosfet, 55V, 53A To-220Ab; Channel Type Infineon IRFZ46NPBF.

The IRFZ46NPBF is a HEXFET® N-channel MOSFET in a TO-220AB package, designed for high-efficiency switching applications. It has a drain-source voltage rating of 55 V and a continuous drain current of 53 A at 25°C. The device features a maximum on-resistance of 16.5 mΩ at VGS = 10 V and can operate at a junction temperature up to 175°C. It is fully avalanche rated with a repetitive avalanche energy of 11 mJ and a peak diode recovery dv/dt of 5.0 V/ns. The gate-source threshold voltage ranges from 2.0 V to 4.0 V. The TO-220AB package provides low thermal resistance, with junction-to-case thermal resistance of 1.4 °C/W and junction-to-ambient of 62 °C/W. The device is lead-free and rated for industrial use.