N-Channel 55V 53A (Tc) 3.8W (Ta), 107W (Tc) Through Hole TO-262
Manufacturer: Infineon Technologies
Win Source Part Number: 017734-IRFZ46NLPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 53A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 1696pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16.5 mOhm @ 28A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
MOSFET N-CH 55V 53A TO262 Product overview: IRFZ46NLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 53A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 53A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ46NLPBF can be used for catalog matching and distributor lookup.
MOSFET MOSFT 55V 53A 16.5mOhm 48nC
MOSFET, N-CH, 55V, 53A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 55V 53A TO262
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFZ46NLPBF-ND | 017734-IRFZ46NLPBF | 278-IRFZ46NLPBF | IRFZ46NLPBF | 91Y4722 | IRFZ46NLPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ46NLPBF | 55V 53A MOSFET Transistor | MOSFET | Mosfet, N-Ch, 55V, 53A, To-262-3; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3; TO-262 | Tube | TO-3 | TO-262-3 Long Leads, I2PAK, TO-262AA | |
| V(BR)DSS | 55 volts | 55 volts | ||||
| PD | 3800 to 107000 milliwatts | 120 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
