Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 138093-IRFZ44ZSTRRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 1420pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.9 mOhm @ 31A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 138093-IRFZ44ZSTRRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 1420pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.9 mOhm @ 31A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
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Datasheet
Datasheet Summary
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The Infineon N-Channel MOSFET, part number 34AC1763, features a maximum drain-source voltage (V_DSS) of 55V and a continuous drain current (I_D) rating of 51A. It has an ultra-low on-resistance (R_DS(on)) of 13.9 m,Ѷ at a gate-source voltage (V_GS) of 10V, which contributes to its efficiency in power applications. The device operates at a maximum junction temperature of 175°C and supports fast switching capabilities, making it suitable for high-performance applications. Additionally, it allows for repetitive avalanche conditions, enhancing its reliability in various circuit designs. The MOSFET is packaged in a TO-263AB form factor and is lead-free, complying with RoHS standards.

Datasheet Summary
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The Infineon N-Channel MOSFET, part number 34AC1763, features a maximum drain-source voltage (V_DSS) of 55V and a continuous drain current (I_D) rating of 51A. It has an ultra-low on-resistance (R_DS(on)) of 13.9 m,Ѷ at a gate-source voltage (V_GS) of 10V, which contributes to its efficiency in power applications. The device operates at a maximum junction temperature of 175°C and supports fast switching capabilities, making it suitable for high-performance applications. Additionally, it allows for repetitive avalanche conditions, enhancing its reliability in various circuit designs. The MOSFET is packaged in a TO-263AB form factor and is lead-free, complying with RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ44ZSTRRPBF - 138093-IRFZ44ZSTRRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ44ZSTRRPBF
138093-IRFZ44ZSTRRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ44ZSTRRPBF 138093-IRFZ44ZSTRRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 138093-IRFZ44ZSTRRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 1420pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.9 mOhm @ 31A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 138093-IRFZ44ZSTRRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 51A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1420pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.9 mOhm @ 31A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
55V 51A MOSFET Transistor
278-IRFZ44ZSTRRPBF
55V 51A MOSFET Transistor 278-IRFZ44ZSTRRPBF
MOSFET N-CH 55V 51A D2PAK Product overview: IRFZ44ZSTRRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 51A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ44ZSTRRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 51A D2PAK Product overview: IRFZ44ZSTRRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 51A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ44ZSTRRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFZ44ZSTRRPBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFZ44ZSTRRPBFDKR-ND
Single FETs, MOSFETs IRFZ44ZSTRRPBFDKR-ND
N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PAK

N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - IRFZ44ZSTRRPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFZ44ZSTRRPBFCT-ND
Single FETs, MOSFETs IRFZ44ZSTRRPBFCT-ND
N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PAK

N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - IRFZ44ZSTRRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFZ44ZSTRRPBFTR-ND
Single FETs, MOSFETs IRFZ44ZSTRRPBFTR-ND
N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PAK

N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - IRFZ44ZSTRRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFZ44ZSTRRPBF
Single FETs, MOSFETs IRFZ44ZSTRRPBF
MOSFET N-CH 55V 51A D2PAK

MOSFET N-CH 55V 51A D2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ44ZSTRRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFZ44ZSTRRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFZ44ZSTRRPBF
MOSFET N-CH 55V 51A D2PAK

MOSFET N-CH 55V 51A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 55V 51A 13.9mOhm 29nC

MOSFET MOSFT 55V 51A 13.9mOhm 29nC

Buy Now Datasheet
Transistor - 108065485 - Radwell International
Willingboro, NJ, United States
Transistor
108065485
Transistor 108065485
(PRICE/TC) MOSFET, N-CH, 55V, 51A, TO-263AB; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:51A; DRAIN SOURCE VOLTAGE VDS:55V; ON RESISTANCE RDS(ON):0.0111OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC) MOSFET, N-CH, 55V, 51A, TO-263AB; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:51A; DRAIN SOURCE VOLTAGE VDS:55V; ON RESISTANCE RDS(ON):0.0111OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Mosfet, N-Ch, 55V, 51A, To-263Ab; Transistor Polarity Infineon - 34AC1763 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 55V, 51A, To-263Ab; Transistor Polarity Infineon
34AC1763
Mosfet, N-Ch, 55V, 51A, To-263Ab; Transistor Polarity Infineon 34AC1763
MOSFET, N-CH, 55V, 51A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 55V, 51A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Radwell International Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 138093-IRFZ44ZSTRRPBF 278-IRFZ44ZSTRRPBF IRFZ44ZSTRRPBFDKR-ND IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF 108065485 34AC1763
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ44ZSTRRPBF 55V 51A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Transistor Mosfet, N-Ch, 55V, 51A, To-263Ab; Transistor Polarity Infineon
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 55 volts 55 volts 55 volts
PD 80000 milliwatts 80 milliwatts 80000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK Tape & Reel (TR) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263
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