MOSFET N-CH 55V 51A TO220AB Product overview: IRFZ44ZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 51A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ44ZPBF can be used for catalog matching and distributor lookup.
N-Channel 55V 51A (Tc) 80W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 1047256-IRFZ44ZPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 51A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1420pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.9 mOhm @ 31A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
MOSFET N-Channel 55V 51A HEXFET TO220AB
MOSFET N-Channel 55V 51A HEXFET TO220AB
MOSFET N-CH 55V 51A TO220AB
MOSFET Transistor, Automotive, N Channel, 51 A, 55 V, 13.9 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET MOSFT 55V 51A 13.9mOhm 29nC Qg
MOSFET N-CH 55V 51A TO220AB
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features:
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFZ44ZPBF | IRFZ44ZPBF-ND | 1047256-IRFZ44ZPBF | 6887165 | IRFZ44ZPBF | 38K2722 | IRFZ44ZPBF | IRFZ44ZPBF | 70017225 |
| Product Name | 55V 51A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ44ZPBF | MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, Automotive, N Channel, 51 A, 55 V, 13.9 Mohm, 10 V, 4 V Rohs Compliant Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11.1 Milliohms;ID 51A;TO-220AB;PD 80W;-55deg |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | 55 volts | |||||
| PD | 80 milliwatts | 80000 milliwatts | 80000 milliwatts | 80000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
