Infineon Technologies AG 60V 57A MOSFET Transistor IRFZ44VZPBF

Description
MOSFET N-CH 60V 57A TO220AB Product overview: IRFZ44VZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 57A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ44VZPBF can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 60V 57A TO220AB Product overview: IRFZ44VZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 57A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ44VZPBF can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
60V 57A MOSFET Transistor
278-IRFZ44VZPBF
60V 57A MOSFET Transistor 278-IRFZ44VZPBF
MOSFET N-CH 60V 57A TO220AB Product overview: IRFZ44VZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 57A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ44VZPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 57A TO220AB Product overview: IRFZ44VZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 57A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ44VZPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ44VZPBF - 1047251-IRFZ44VZPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ44VZPBF
1047251-IRFZ44VZPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ44VZPBF 1047251-IRFZ44VZPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047251-IRFZ44VZPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 57A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 1690pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 34A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1047251-IRFZ44VZPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 92W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 57A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 1690pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 34A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRFZ44VZPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFZ44VZPBF-ND
Single FETs, MOSFETs IRFZ44VZPBF-ND
N-Channel 60V 57A (Tc) 92W (Tc) Through Hole TO-220AB

N-Channel 60V 57A (Tc) 92W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Mosfet, N-Ch, 60V, 57A, 175Deg C, 92W; Transistor Polarity Infineon - 39AH8941 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 57A, 175Deg C, 92W; Transistor Polarity Infineon
39AH8941
Mosfet, N-Ch, 60V, 57A, 175Deg C, 92W; Transistor Polarity Infineon 39AH8941
MOSFET, N-CH, 60V, 57A, 175DEG C, 92W; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 60V, 57A, 175DEG C, 92W; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFZ44VZPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFZ44VZPBF
Single FETs, MOSFETs IRFZ44VZPBF
MOSFET N-CH 60V 57A TO220AB

MOSFET N-CH 60V 57A TO220AB

Supplier's Site Datasheet
Transistor - 66783567 - Radwell International
Willingboro, NJ, United States
Transistor
66783567
Transistor 66783567
MOSFET, N-CH, 60V, 57A, 175DEG C, 92W, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:57A, DRAIN SOURCE VOLTAGE VDS:60V, ON RESISTANCE RDS(ON):0.012OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:4V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 60V, 57A, 175DEG C, 92W, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:57A, DRAIN SOURCE VOLTAGE VDS:60V, ON RESISTANCE RDS(ON):0.012OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:4V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ44VZPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFZ44VZPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFZ44VZPBF
MOSFET N-CH 60V 57A TO220AB

MOSFET N-CH 60V 57A TO220AB

Supplier's Site
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 9.6Milliohms;ID 57A;TO-220AB;PD 92W;gFS 25S - 70016927 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 9.6Milliohms;ID 57A;TO-220AB;PD 92W;gFS 25S
70016927
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 9.6Milliohms;ID 57A;TO-220AB;PD 92W;gFS 25S 70016927
Power MOSFET, Pulsed Drain Current 230 A, Input Capacitance 1690 pF Advanced process technology Ultra low on-resistance 175 °C operating temperature Fast switching Repetitive avalanche allowed up to Tjmax Lead-free Specifically designed for automotive applications, this HEXFET® power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature

Power MOSFET, Pulsed Drain Current 230 A, Input Capacitance 1690 pF

  • Advanced process technology
  • Ultra low on-resistance
  • 175 °C operating temperature
  • Fast switching
  • Repetitive avalanche allowed up to Tjmax
  • Lead-free
    Specifically designed for automotive applications, this HEXFET® power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature
Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 60V 57A 12mOhm 43nC

MOSFET MOSFT 60V 57A 12mOhm 43nC

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Newark, An Avnet Company ODG (Origin Data Global) Radwell International Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-IRFZ44VZPBF 1047251-IRFZ44VZPBF IRFZ44VZPBF-ND 39AH8941 IRFZ44VZPBF 66783567 IRFZ44VZPBF 70016927 IRFZ44VZPBF
Product Name 60V 57A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ44VZPBF Single FETs, MOSFETs Mosfet, N-Ch, 60V, 57A, 175Deg C, 92W; Transistor Polarity Infineon Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 9.6Milliohms;ID 57A;TO-220AB;PD 92W;gFS 25S MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts 60 volts 60 volts
PD 92 milliwatts 92000 milliwatts 92000 milliwatts 92000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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