MOSFET N-CH 60V 55A TO220AB Product overview: IRFZ44VPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 55A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ44VPBF can be used for catalog matching and distributor lookup.
N-Channel 60V 55A (Tc) 115W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 069624-IRFZ44VPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Family Name: IRFZ44V
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 1812pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16.5 mOhm @ 31A, 10V
Alternative Parts (Cross-Reference): SUP60N06-18-E3; SUP60N06-18; STP55NF06;
Introduction Date: November 10, 2003
ECCN: EAR99
Country of Origin: Philippines, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
N CHANNEL MOSFET, 60V, 55A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:55A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 16.5 Milliohms;ID 55A;TO-220AB;PD 115W;-55de
MOSFET N-CH 60V 55A TO220AB
MOSFET N-CH 60V 55A TO220AB
MOSFET MOSFT 60V 55A 16.5mOhm 44.7nC
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFZ44VPBF | IRFZ44VPBF-ND | 069624-IRFZ44VPBF | 63J7138 | 70017246 | IRFZ44VPBF | IRFZ44VPBF | IRFZ44VPBF |
| Product Name | 60V 55A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ44VPBF | N Channel Mosfet, 60V, 55A To-220Ab; Channel Type Infineon | MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 16.5 Milliohms;ID 55A;TO-220AB;PD 115W;-55de | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||
| PD | 115 milliwatts | 115000 milliwatts | 115000 milliwatts | 115000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
