Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRFZ34VS

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Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

Utmel Electronic Limited

Description

Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 - 3717-IRFZ34VS - Utmel Electronic Limited

Utmel Electronic Limited

Hong Kong, China

Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
3717-IRFZ34VS

Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 3717-IRFZ34VS

Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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Technical Specifications

	Utmel Electronic Limited
Product Category	Transistors
Product Number	3717-IRFZ34VS
Product Name	Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
Polarity	N-Channel