Infineon Technologies AG Single FETs, MOSFETs IRFZ34E

Description
N-Channel 60V 28A (Tc) 68W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 60V 28A (Tc) 68W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFZ34E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFZ34E-ND
Single FETs, MOSFETs IRFZ34E-ND
N-Channel 60V 28A (Tc) 68W (Tc) Through Hole TO-220AB

N-Channel 60V 28A (Tc) 68W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Singapore
60V 28A MOSFET Transistor
278-IRFZ34E
60V 28A MOSFET Transistor 278-IRFZ34E
MOSFET N-CH 60V 28A TO220AB Product overview: IRFZ34E from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ34E can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 28A TO220AB Product overview: IRFZ34E from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ34E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ34E - 1047237-IRFZ34E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ34E
1047237-IRFZ34E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ34E 1047237-IRFZ34E
Manufacturer: Infineon Technologies Win Source Part Number: 1047237-IRFZ34E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 680pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 42 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 1047237-IRFZ34E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 680pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ34E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFZ34E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFZ34E
MOSFET N-CH 60V 28A TO220AB

MOSFET N-CH 60V 28A TO220AB

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFZ34E-ND 278-IRFZ34E 1047237-IRFZ34E IRFZ34E
Product Name Single FETs, MOSFETs 60V 28A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ34E Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Tube TO-220; SOT3; TO-220AB -55degC ~ 175degC (TJ)
PD 68000 milliwatts 68000 milliwatts
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7 suppliers