Infineon Technologies AG Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN IRFY9240CM

Description
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
  • Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN - 9152-IRFY9240CM - Utmel Electronic Limited
    Utmel Electronic Limited
Description
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN - 9152-IRFY9240CM - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
9152-IRFY9240CM
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN 9152-IRFY9240CM
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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Technical Specifications

  Utmel Electronic Limited
Product Category Transistors
Product Number 9152-IRFY9240CM
Product Name Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
Polarity P-Channel
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