MOSFET N-CH 200V 9.4A IPAK Product overview: IRFU9N20D from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU9N20D can be used for catalog matching and distributor lookup.
N-Channel 200V 9.4A (Tc) 86W (Tc) Through Hole IPAK (TO-251AA)
Manufacturer: Infineon Technologies
Win Source Part Number: 1040393-IRFU9N20D
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 86W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9.4A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 560pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 200V 9.4A IPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFU9N20D | IRFU9N20D-ND | 1040393-IRFU9N20D | IRFU9N20D |
| Product Name | 200V 9.4A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU9N20D | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 86000 milliwatts | 86000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | Tube | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |