Manufacturer: Infineon Technologies
Win Source Part Number: 1047223-IRFU5505PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 9.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Application Field: Used in Automotive, Power Management
P-Channel 55V 18A (Tc) 57W (Tc) Through Hole IPAK (TO-251AA)
MOSFET P-CH 55V 18A IPAK
MOSFET P-CH 55V 18A IPAK Product overview: IRFU5505PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU5505PBF can be used for catalog matching and distributor lookup.
MOSFET P-CH 55V 18A IPAK
MOSFET MOSFT P-Ch -55V -18A 110mOhm 21.3nC
MOSFET, P-CH, 55V, 18A, 150DEG C, 57W; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, P-CHANNEL, 55V, 18A (TC), 57W (TC), THROUGH HOLE, IPAK (TO-251AA). FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1047223-IRFU5505PBF | IRFU5505PBF-ND | IRFU5505PBF | 278-IRFU5505PBF | IRFU5505PBF | IRFU5505PBF | 38K2690 | 66783523 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU5505PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | 55V 18A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 55V, 18A, 150Deg C, 57W; Channel Type Infineon | Transistor |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | |||||
| PD | 57000 milliwatts | 57000 milliwatts | 57000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; IPAK (TO-251) | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | Tube | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 |
