Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3706-701PBF IRFU3706-701PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047213-IRFU3706-701 PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 35nC @ 4.5V Max Input Capacitance: 2410pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 9 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 75
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047213-IRFU3706-701 PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 35nC @ 4.5V Max Input Capacitance: 2410pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 9 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 75
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3706-701PBF - 1047213-IRFU3706-701PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3706-701PBF
1047213-IRFU3706-701PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3706-701PBF 1047213-IRFU3706-701PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047213-IRFU3706-701 PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 35nC @ 4.5V Max Input Capacitance: 2410pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 9 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 75

Manufacturer: Infineon Technologies
Win Source Part Number: 1047213-IRFU3706-701PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 35nC @ 4.5V
Max Input Capacitance: 2410pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 9 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Quantity per package: 75

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047213-IRFU3706-701PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3706-701PBF
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 88000 milliwatts
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