Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3518 IRFU3518

Description
Manufacturer: Infineon Technologies Win Source Part Number: 205408-IRFU3518 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 38A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 56nC @ 10V Max Input Capacitance: 1710pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 29 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 205408-IRFU3518 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 38A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 56nC @ 10V Max Input Capacitance: 1710pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 29 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3518 - 205408-IRFU3518 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3518
205408-IRFU3518
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3518 205408-IRFU3518
Manufacturer: Infineon Technologies Win Source Part Number: 205408-IRFU3518 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 38A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 56nC @ 10V Max Input Capacitance: 1710pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 29 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 205408-IRFU3518
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 38A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 1710pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 29 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205408-IRFU3518
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3518
Polarity N-Channel; N-Channel
V(BR)DSS 80 volts
PD 110000 milliwatts
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