Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU3518 IRFU3518

Manufacturer: Infineon Technologies
Win Source Part Number: 205408-IRFU3518
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 38A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 1710pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 29 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

MOSFET N-CH 80V 38A IPAK Product overview: IRFU3518 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 38A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFU3518 can be used for catalog matching and distributor lookup.