Infineon Technologies AG Single FETs, MOSFETs IRFU2607ZPBF

Description
N-Channel 75V 42A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)
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Description
N-Channel 75V 42A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)
Request a Quote Datasheet

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Single FETs, MOSFETs - IRFU2607ZPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU2607ZPBF-ND
Single FETs, MOSFETs IRFU2607ZPBF-ND
N-Channel 75V 42A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)

N-Channel 75V 42A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU2607ZPBF - 777082-IRFU2607ZPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU2607ZPBF
777082-IRFU2607ZPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU2607ZPBF 777082-IRFU2607ZPBF
Manufacturer: Infineon Technologies Win Source Part Number: 777082-IRFU2607ZPBF Series: HEXFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-251-3 Short Leads, IPak, TO-251AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Part Status: Obsolete(EOL) Family Name: IRFU2607Z Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: IPAK (TO-251) Channel Type Type: N Drain Source Voltage: 75V Vgs(th) (Maximum) @ Id: 4V @ 50μA Gate Charge (Qg) (Maximum) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1440pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 110W (Tc) Rds On (Maximum) @ Id, Vgs: 22 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): IRFU2607Z; Introduction Date: December 21, 2004 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 777082-IRFU2607ZPBF
Series: HEXFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-251-3 Short Leads, IPak, TO-251AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Part Status: Obsolete(EOL)
Family Name: IRFU2607Z
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: IPAK (TO-251)
Channel Type Type: N
Drain Source Voltage: 75V
Vgs(th) (Maximum) @ Id: 4V @ 50μA
Gate Charge (Qg) (Maximum) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1440pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 110W (Tc)
Rds On (Maximum) @ Id, Vgs: 22 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): IRFU2607Z;
Introduction Date: December 21, 2004
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU2607ZPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU2607ZPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU2607ZPBF
MOSFET N-CH 75V 42A IPAK

MOSFET N-CH 75V 42A IPAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFU2607ZPBF-ND 777082-IRFU2607ZPBF IRFU2607ZPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU2607ZPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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