Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU13N20DPBF IRFU13N20DPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1047200-IRFU13N20DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 830pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 235 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

N-Channel 200V 13A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)

MOSFET N-CH 200V 13A IPAK Product overview: IRFU13N20DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU13N20DPBF can be used for catalog matching and distributor lookup.