Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL7762PBF IRFSL7762PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047191-IRFSL7762PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 85A (Tc) Gate-Source Threshold Voltage: 3.7V @ 100μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 4440pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.7 mOhm @ 51A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL7762PBF - 1047191-IRFSL7762PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFSL7762PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFSL7762PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 75V 85A TO262 - 376-IRFSL7762PBF - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047191-IRFSL7762PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 85A (Tc) Gate-Source Threshold Voltage: 3.7V @ 100μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 4440pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.7 mOhm @ 51A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL7762PBF - 1047191-IRFSL7762PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL7762PBF
1047191-IRFSL7762PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL7762PBF 1047191-IRFSL7762PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047191-IRFSL7762PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 85A (Tc) Gate-Source Threshold Voltage: 3.7V @ 100μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 4440pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.7 mOhm @ 51A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1047191-IRFSL7762PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 85A (Tc)
Gate-Source Threshold Voltage: 3.7V @ 100μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 4440pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.7 mOhm @ 51A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFSL7762PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFSL7762PBF-ND
Single FETs, MOSFETs IRFSL7762PBF-ND
N-Channel 75V 85A (Tc) 140W (Tc) Through Hole TO-262

N-Channel 75V 85A (Tc) 140W (Tc) Through Hole TO-262

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFSL7762PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFSL7762PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFSL7762PBF
MOSFET N-CH 75V 85A TO262

MOSFET N-CH 75V 85A TO262

Supplier's Site
MOSFET N-CH 75V 85A TO262 - 376-IRFSL7762PBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 75V 85A TO262
376-IRFSL7762PBF
MOSFET N-CH 75V 85A TO262 376-IRFSL7762PBF
MOSFET N-CH 75V 85A TO262

MOSFET N-CH 75V 85A TO262

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047191-IRFSL7762PBF IRFSL7762PBF-ND IRFSL7762PBF 376-IRFSL7762PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL7762PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 75V 85A TO262
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 75 volts
PD 140000 milliwatts 140000 milliwatts
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