Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IRFSL7434PBF

Description
Win Source Part Number: 1212406-IRFSL7434PBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HEXFET®, StrongIRFET™ Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 294W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262 Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001557628 Base Product Number: IRFSL7434 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
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Description
Win Source Part Number: 1212406-IRFSL7434PBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HEXFET®, StrongIRFET™ Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 294W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262 Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001557628 Base Product Number: IRFSL7434 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1212406-IRFSL7434PBF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1212406-IRFSL7434PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1212406-IRFSL7434PBF
Win Source Part Number: 1212406-IRFSL7434PBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HEXFET®, StrongIRFET™ Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 294W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262 Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001557628 Base Product Number: IRFSL7434 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V

Win Source Part Number: 1212406-IRFSL7434PBF
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HEXFET®, StrongIRFET™
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 294W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001557628
Base Product Number: IRFSL7434
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - IRFSL7434PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFSL7434PBF-ND
Single FETs, MOSFETs IRFSL7434PBF-ND
N-Channel 40V 195A (Tc) 294W (Tc) Through Hole TO-262

N-Channel 40V 195A (Tc) 294W (Tc) Through Hole TO-262

Buy Now Datasheet
Singapore, Singapore
40V 195A MOSFET Transistor
278-IRFSL7434PBF
40V 195A MOSFET Transistor 278-IRFSL7434PBF
MOSFET N-CH 40V 195A TO262 Product overview: IRFSL7434PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFSL7434PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 195A TO262 Product overview: IRFSL7434PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFSL7434PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFSL7434PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFSL7434PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFSL7434PBF
MOSFET N-CH 40V 195A TO262

MOSFET N-CH 40V 195A TO262

Supplier's Site
Sheung Wan, Hong Kong
MOSFET HEXFET Power MOSFET 40V Single N-Channel

MOSFET HEXFET Power MOSFET 40V Single N-Channel

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1212406-IRFSL7434PBF IRFSL7434PBF-ND 278-IRFSL7434PBF IRFSL7434PBF IRFSL7434PBF
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 40V 195A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
PD 294000 milliwatts 294000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3 TO-262-3 Long Leads, I2PAK, TO-262AA Tube TO-262-3 Long Leads, I2PAK, TO-262AA
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