Manufacturer: Infineon Technologies
Win Source Part Number: 040759-IRFSL4615PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 144W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1750pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 21A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
MOSFET N-CH 150V 33A TO-262 Product overview: IRFSL4615PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 33A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFSL4615PBF can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 040759-IRFSL4615PBF | 285-IRFSL4615PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL4615PBF | 150V 33A MOSFET Transistor |
| Polarity | N-Channel; N-Channel | N-Channel |
| V(BR)DSS | 150 volts | |
| PD | 144000 milliwatts | 144000 milliwatts |