N-Channel 100V 130A (Tc) 300W (Tc) Through Hole TO-262
Manufacturer: Infineon Technologies
Win Source Part Number: 205401-IRFSL4310PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 250nC @ 10V
Max Input Capacitance: 7670pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 130A TO262 Product overview: IRFSL4310PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFSL4310PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 130A TO262
MOSFET N-CH 100V 130A TO262
MOSFET N-CH 100V 130A TO-262
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFSL4310PBF-ND | 205401-IRFSL4310PBF | 278-IRFSL4310PBF | IRFSL4310PBF | IRFSL4310PBF | 376-IRFSL4310PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFSL4310PBF | 100V 130A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 100V 130A TO-262 |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3; TO-262 | Tube | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA | |
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||
| PD | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts | 330000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
