Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4510PBF IRFS4510PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047144-IRFS4510PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 61A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 87nC @ 10V Max Input Capacitance: 3180pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.9 mOhm @ 37A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047144-IRFS4510PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 61A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 87nC @ 10V Max Input Capacitance: 3180pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.9 mOhm @ 37A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4510PBF - 1047144-IRFS4510PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4510PBF
1047144-IRFS4510PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4510PBF 1047144-IRFS4510PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047144-IRFS4510PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 61A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 87nC @ 10V Max Input Capacitance: 3180pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.9 mOhm @ 37A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1047144-IRFS4510PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 61A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 87nC @ 10V
Max Input Capacitance: 3180pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.9 mOhm @ 37A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFS4510PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFS4510PBF-ND
Single FETs, MOSFETs IRFS4510PBF-ND
N-Channel 100V 61A (Tc) 140W (Tc) Surface Mount PG-TO263-3

N-Channel 100V 61A (Tc) 140W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFS4510PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFS4510PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFS4510PBF
MOSFET N-CH 100V 61A D2PAK

MOSFET N-CH 100V 61A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1047144-IRFS4510PBF IRFS4510PBF-ND IRFS4510PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4510PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 140000 milliwatts
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