Manufacturer: Infineon Technologies
Win Source Part Number: 083593-IRFS4310ZPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 6860pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 75A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount D2PAK
MOSFET N-CH 100V 120A D2PAK
MOSFET N-CH 100V 120A TO263-3-2
MOSFET N-CH 100V 120A D2PAK
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 083593-IRFS4310ZPBF | IRFS4310ZPBF-ND | IRFS4310ZPBF | IRFS4310ZPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4310ZPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |
| V(BR)DSS | 100 volts | 100 volts | ||
| PD | 250000 milliwatts | 250000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
