MOSFET N-CH 100V 130A D2PAK Product overview: IRFS4310TRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFS4310TRLPBF can be used for catalog matching and distributor lookup.
N-Channel 100V 130A (Tc) 300W (Tc) Surface Mount D2PAK
N-Channel 100V 130A (Tc) 300W (Tc) Surface Mount D2PAK
N-Channel 100V 130A (Tc) 300W (Tc) Surface Mount D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 111578-IRFS4310TRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: IRFS4310
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 250nC @ 10V
Max Input Capacitance: 7670pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): PSMN7R0-100BS,118; IXTA160N10T; SUM70060E-GE3; AOB2918L;
Introduction Date: November 03, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
MOSFET MOSFT 100V 140A 7mOhm 170nC
MOSFET N-CH 100V 130A D2PAK
MOSFET, N-CH, 100V, 130A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 130A D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFS4310TRLPBF | IRFS4310TRLPBFCT-ND | 111578-IRFS4310TRLPBF | IRFS4310TRLPBF | IRFS4310TRLPBF | 13AC9158 | IRFS4310TRLPBF |
| Product Name | 100V 130A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4310TRLPBF | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 130A, To-263Ab; Transistor Polarity Infineon | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||
| Transconductance | 0.1600 kS | ||||||
| PD | 300 milliwatts | 300000 milliwatts | 300000 milliwatts |
