Infineon Technologies AG Single FETs, MOSFETs IRFS4310PBF

Description
N-Channel 100V 130A (Tc) 300W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 100V 130A (Tc) 300W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFS4310PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFS4310PBF-ND
Single FETs, MOSFETs IRFS4310PBF-ND
N-Channel 100V 130A (Tc) 300W (Tc) Surface Mount D2PAK

N-Channel 100V 130A (Tc) 300W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4310PBF - 205397-IRFS4310PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4310PBF
205397-IRFS4310PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4310PBF 205397-IRFS4310PBF
Manufacturer: Infineon Technologies Win Source Part Number: 205397-IRFS4310PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 130A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 250nC @ 10V Max Input Capacitance: 7670pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 205397-IRFS4310PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 250nC @ 10V
Max Input Capacitance: 7670pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
100V 130A MOSFET Transistor
278-IRFS4310PBF
100V 130A MOSFET Transistor 278-IRFS4310PBF
MOSFET N-CH 100V 130A D2PAK Product overview: IRFS4310PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFS4310PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 130A D2PAK Product overview: IRFS4310PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFS4310PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFS4310PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFS4310PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFS4310PBF
MOSFET N-CH 100V 130A D2PAK

MOSFET N-CH 100V 130A D2PAK

Supplier's Site
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;D2Pak;PD 300W;VF 1.3V - 70017258 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;D2Pak;PD 300W;VF 1.3V
70017258
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;D2Pak;PD 300W;VF 1.3V 70017258
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;D2Pak;PD 300W;VF 1.3V

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;D2Pak;PD 300W;VF 1.3V

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFS4310PBF-ND 205397-IRFS4310PBF 278-IRFS4310PBF IRFS4310PBF 70017258
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS4310PBF 100V 130A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;D2Pak;PD 300W;VF 1.3V
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK Tube TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB D2Pak
V(BR)DSS 100 volts 100 volts
PD 300000 milliwatts 300000 milliwatts 300000 milliwatts
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