N-Channel 75V 80A (Tc) 140W (Tc) Surface Mount D2PAK
N-Channel 75V 80A (Tc) 140W (Tc) Surface Mount D2PAK
N-Channel 75V 80A (Tc) 140W (Tc) Surface Mount D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 017709-IRFS3607TRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Family Name: IRFS3607
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 3070pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 46A, 10V
Alternative Parts (Cross-Reference): HUF75545S3S; 2SK3510-ZJ-AZ; 2SK3510-ZJ-E1;
Introduction Date: March 04, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
(PRICE/TC) MOSFET, N-CH, 75V, 80A, TO-263-3; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:80A; DRAIN SOURCE VOLTAGE VDS:75V; ON RESISTANCE RDS(ON):0.00734OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 75V 80A D2PAK
MOSFET, N-CH, 75V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.00734ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 75V 80A D2PAK
MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg
| DigiKey | Win Source Electronics | Radwell International | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFS3607TRLPBFDKR-ND | 017709-IRFS3607TRLPBF | 108074257 | 2579426 | IRFS3607TRLPBF | 43AC3279 | IRFS3607TRLPBF | IRFS3607TRLPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS3607TRLPBF | Transistor | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 75V, 80A, To-263-3; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263; TO-252 (DPAK) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| V(BR)DSS | 75 volts | 75 volts | ||||||
| PD | 140000 milliwatts | 140000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
