Infineon Technologies AG Single FETs, MOSFETs IRFS3206PBF

Description
N-Channel 60V 120A (Tc) 300W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 60V 120A (Tc) 300W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFS3206PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFS3206PBF-ND
Single FETs, MOSFETs IRFS3206PBF-ND
N-Channel 60V 120A (Tc) 300W (Tc) Surface Mount D2PAK

N-Channel 60V 120A (Tc) 300W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Singapore
60V 210A MOSFET Transistor
285-IRFS3206PBF
60V 210A MOSFET Transistor 285-IRFS3206PBF
Trans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 60V 120A D2PAK Product overview: IRFS3206PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 210A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 210A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFS3206PBF can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 60V 120A D2PAK Product overview: IRFS3206PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 210A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 210A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFS3206PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS3206PBF
090900-IRFS3206PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS3206PBF 090900-IRFS3206PBF
Manufacturer: Infineon Technologies Win Source Part Number: 090900-IRFS3206PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Family Name: IRFS3206 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 6540pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 75A, 10V Alternative Parts (Cross-Reference): RJ1L12BGNTLL; BUK762R4-60E; AOB264L; SQM120N06-04L-GE3; Introduction Date: June 05, 2006 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 090900-IRFS3206PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: IRFS3206
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 6540pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): RJ1L12BGNTLL; BUK762R4-60E; AOB264L; SQM120N06-04L-GE3;
Introduction Date: June 05, 2006
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Fort Worth, TX, USA
MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, D2-PAK, Pb-Free
70017940
MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, D2-PAK, Pb-Free 70017940
MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, D2-PAK, Pb-Free

MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, D2-PAK, Pb-Free

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFS3206PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFS3206PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFS3206PBF
MOSFET N-CH 60V 120A D2PAK

MOSFET N-CH 60V 120A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFS3206PBF-ND 285-IRFS3206PBF 090900-IRFS3206PBF 70017940 IRFS3206PBF
Product Name Single FETs, MOSFETs 60V 210A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS3206PBF MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, D2-PAK, Pb-Free Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube/Rail TO-263; SOT3; D2PAK 170 nC @ 10 V
PD 300000 milliwatts 300000 milliwatts
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