N-Channel 60V 120A (Tc) 300W (Tc) Surface Mount D2PAK
Trans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 60V 120A D2PAK Product overview: IRFS3206PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 210A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 210A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFS3206PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 090900-IRFS3206PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: IRFS3206
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 6540pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): RJ1L12BGNTLL; BUK762R4-60E; AOB264L; SQM120N06-04L-GE3;
Introduction Date: June 05, 2006
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 120A D2PAK
MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, D2-PAK, Pb-Free
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFS3206PBF-ND | 285-IRFS3206PBF | 090900-IRFS3206PBF | IRFS3206PBF | 70017940 |
| Product Name | Single FETs, MOSFETs | 60V 210A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS3206PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, D2-PAK, Pb-Free |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube/Rail | TO-263; SOT3; D2PAK | 170 nC @ 10 V | |
| PD | 300000 milliwatts | 300000 milliwatts |
