Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9N20DTRPBF IRFR9N20DTRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017705-IRFR9N20DTRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 86W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9.4A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 560pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 017705-IRFR9N20DTRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 86W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9.4A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 560pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9N20DTRPBF - 017705-IRFR9N20DTRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9N20DTRPBF
017705-IRFR9N20DTRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9N20DTRPBF 017705-IRFR9N20DTRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017705-IRFR9N20DTRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 86W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9.4A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 560pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017705-IRFR9N20DTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 86W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9.4A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 560pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
200V 9.4A DPAK MOSFET Transistor
278-IRFR9N20DTRPBF
200V 9.4A DPAK MOSFET Transistor 278-IRFR9N20DTRPBF
MOSFET N-CH 200V 9.4A DPAK Product overview: IRFR9N20DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9.4A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.4A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR9N20DTRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 9.4A DPAK Product overview: IRFR9N20DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9.4A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.4A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR9N20DTRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFR9N20DTRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR9N20DTRPBFTR-ND
Single FETs, MOSFETs IRFR9N20DTRPBFTR-ND
N-Channel 200V 9.4A (Tc) 86W (Tc) Surface Mount D-Pak

N-Channel 200V 9.4A (Tc) 86W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC

MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR9N20DTRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR9N20DTRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR9N20DTRPBF
MOSFET N-CH 200V 9.4A DPAK

MOSFET N-CH 200V 9.4A DPAK

Supplier's Site
Single FETs, MOSFETs - IRFR9N20DTRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFR9N20DTRPBF
Single FETs, MOSFETs IRFR9N20DTRPBF
MOSFET N-CH 200V 9.4A DPAK

MOSFET N-CH 200V 9.4A DPAK

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017705-IRFR9N20DTRPBF 278-IRFR9N20DTRPBF IRFR9N20DTRPBFTR-ND IRFR9N20DTRPBF IRFR9N20DTRPBF IRFR9N20DTRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9N20DTRPBF 200V 9.4A DPAK MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 86000 milliwatts 86000 milliwatts 86000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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9 suppliers