Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9N20DPBF IRFR9N20DPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1047111-IRFR9N20DPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 86W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9.4A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 560pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management

MOSFET N-CH 200V 9.4A DPAK Product overview: IRFR9N20DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9.4A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.4A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR9N20DPBF can be used for catalog matching and distributor lookup.

N-Channel 200V 9.4A (Tc) 86W (Tc) Surface Mount D-Pak