Infineon Technologies AG Single FETs, MOSFETs IRFR812TRPBF

Description
N-Channel 500V 3.6A (Tc) 78W (Tc) Surface Mount D-Pak
Request a Quote Datasheet
Description
N-Channel 500V 3.6A (Tc) 78W (Tc) Surface Mount D-Pak
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFR812TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR812TRPBFTR-ND
Single FETs, MOSFETs IRFR812TRPBFTR-ND
N-Channel 500V 3.6A (Tc) 78W (Tc) Surface Mount D-Pak

N-Channel 500V 3.6A (Tc) 78W (Tc) Surface Mount D-Pak

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR812TRPBF - 1047093-IRFR812TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR812TRPBF
1047093-IRFR812TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR812TRPBF 1047093-IRFR812TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047093-IRFR812TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 810pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1047093-IRFR812TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 810pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
500V 3.6A DPAK MOSFET Transistor
278-IRFR812TRPBF
500V 3.6A DPAK MOSFET Transistor 278-IRFR812TRPBF
MOSFET N-CH 500V 3.6A DPAK Product overview: IRFR812TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR812TRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 3.6A DPAK Product overview: IRFR812TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR812TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 500V 3.5A 2.2Ohm MotIRFET

MOSFET 500V 3.5A 2.2Ohm MotIRFET

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MOSFET N-CH 500V 3.6A DPAK - 376-IRFR812TRPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 3.6A DPAK
376-IRFR812TRPBF
MOSFET N-CH 500V 3.6A DPAK 376-IRFR812TRPBF
MOSFET N-CH 500V 3.6A DPAK

MOSFET N-CH 500V 3.6A DPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR812TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR812TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR812TRPBF
MOSFET N-CH 500V 3.6A DPAK

MOSFET N-CH 500V 3.6A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFR812TRPBFTR-ND 1047093-IRFR812TRPBF 278-IRFR812TRPBF IRFR812TRPBF 376-IRFR812TRPBF IRFR812TRPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR812TRPBF 500V 3.6A DPAK MOSFET Transistor MOSFET MOSFET N-CH 500V 3.6A DPAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak Tape & Reel (TR) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 500 volts 500 volts
PD 78000 milliwatts 78000 milliwatts 78000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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