MOSFET N-CH 500V 3.6A DPAK Product overview: IRFR812PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR812PBF can be used for catalog matching and distributor lookup.
N-Channel 500V 3.6A (Tc) 78W (Tc) Surface Mount D-Pak
Manufacturer: Infineon Technologies
Win Source Part Number: 1047094-IRFR812PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 78W (Tc)
Family Name: IRFR812
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 810pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
Alternative Parts (Cross-Reference): IRFR4209A; TSM4NC50CP ROG; IRFR420TM; IRFR420TF;
Introduction Date: April 11, 2012
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET N-CH 500V 3.6A DPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFR812PBF | IRFR812PBF-ND | 1047094-IRFR812PBF | IRFR812PBF |
| Product Name | 500V 3.6A DPAK MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR812PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 78000 milliwatts | 78000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tube | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); D-Pak | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |