Infineon Technologies AG Single FETs, MOSFETs IRFR812PBF

Description
N-Channel 500V 3.6A (Tc) 78W (Tc) Surface Mount D-Pak
Request a Quote Datasheet
Description
N-Channel 500V 3.6A (Tc) 78W (Tc) Surface Mount D-Pak
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFR812PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR812PBF-ND
Single FETs, MOSFETs IRFR812PBF-ND
N-Channel 500V 3.6A (Tc) 78W (Tc) Surface Mount D-Pak

N-Channel 500V 3.6A (Tc) 78W (Tc) Surface Mount D-Pak

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR812PBF - 1047094-IRFR812PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR812PBF
1047094-IRFR812PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR812PBF 1047094-IRFR812PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047094-IRFR812PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 78W (Tc) Family Name: IRFR812 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 810pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Alternative Parts (Cross-Reference): IRFR4209A; TSM4NC50CP ROG; IRFR420TM; IRFR420TF; Introduction Date: April 11, 2012 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1047094-IRFR812PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 78W (Tc)
Family Name: IRFR812
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 810pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
Alternative Parts (Cross-Reference): IRFR4209A; TSM4NC50CP ROG; IRFR420TM; IRFR420TF;
Introduction Date: April 11, 2012
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
500V 3.6A DPAK MOSFET Transistor
278-IRFR812PBF
500V 3.6A DPAK MOSFET Transistor 278-IRFR812PBF
MOSFET N-CH 500V 3.6A DPAK Product overview: IRFR812PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR812PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 3.6A DPAK Product overview: IRFR812PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR812PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR812PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR812PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR812PBF
MOSFET N-CH 500V 3.6A DPAK

MOSFET N-CH 500V 3.6A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFR812PBF-ND 1047094-IRFR812PBF 278-IRFR812PBF IRFR812PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR812PBF 500V 3.6A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak Tube TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 500 volts
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