Infineon Technologies AG Single FETs, MOSFETs IRFR6215CPBF

Description
P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak
  • Single FETs, MOSFETs - IRFR6215CPBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR6215CPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFR6215CPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR6215CPBF-ND
Single FETs, MOSFETs IRFR6215CPBF-ND
P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak

P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR6215CPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR6215CPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR6215CPBF
MOSFET P-CH 150V 13A DPAK

MOSFET P-CH 150V 13A DPAK

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number IRFR6215CPBF-ND IRFR6215CPBF
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SB860-E - 855129-2SB860-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SB860-E
2SB860-E
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
IGBT Modules - 2PS18012E44G38553NOSA1 - VAST STOCK CO., LIMITED
Infineon Technologies AG
IGBT Modules
2PS18012E44G38553NOSA1
View Details
2 suppliers
7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor - QPD1011 - Qorvo
Qorvo
7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor
QPD1011
Specs
Transistor Technology / Material GaN
Package Type DFN / SMT
Power Gain 21 dB
View Details